STP22NF03L STMicroelectronics, STP22NF03L Datasheet

MOSFET N-CH 30V 22A TO-220

STP22NF03L

Manufacturer Part Number
STP22NF03L
Description
MOSFET N-CH 30V 22A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP22NF03L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 5V
Input Capacitance (ciss) @ Vds
330pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
22A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7516-5
STP22NF03L

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Features
Application
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
October 2008
STP22NF03L
Exceptional dv/dt capability
Low gate charge at 100°C
Application oriented characterization
100% avalanche tested
Switching applications
Type
STP22NF03L
Order code
Device summary
V
30 V
DSS
R
DS(on)
< 0.05 Ω
P22NF03L@
Marking
max
N-channel 30 V, 0.0038 Ω, 22 A, TO-220
22 A
I
D
Rev 5
Figure 1.
STripFET™ II Power MOSFET
Package
TO-220
Internal schematic diagram
TO-220
STP22NF03L
1
Packaging
2
Tube
3
www.st.com
1/12
12

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STP22NF03L Summary of contents

Page 1

... Table 1. Device summary Order code STP22NF03L October 2008 N-channel 30 V, 0.0038 Ω TO-220 STripFET™ II Power MOSFET max I DS(on) D < 0.05 Ω Figure 1. Marking P22NF03L@ Rev 5 STP22NF03L TO-220 Internal schematic diagram Package Packaging TO-220 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP22NF03L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STP22NF03L 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous (1) I Drain current (continuous (1) I Drain current (pulsed Total dissipation at T tot Derating factor (2) dv/dt Peak diode recovery voltage slope (3) E Single pulse avalanche energy ...

Page 4

... max ratings max ratings 125 ° ± Parameter Test conditions MHz 4.7 Ω Figure 13) (see Figure 14) (see STP22NF03L Min. Typ. Max ±100 = 250 µ 0.038 0. 0.045 0.06 Min. Typ. Max 330 6.5 D 3.6 2 Unit V 1 µA 10 µ Ω Ω Unit ...

Page 5

... STP22NF03L Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area 0.1 0 Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. AM01526v1 100µs 1ms 10ms V (V) 100 DS Figure 5. Figure 7. STP22NF03L Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STP22NF03L Figure 8. Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs. temperature 7/12 ...

Page 8

... V =20V AM01468v1 Figure 16. Unclamped Inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 STP22NF03L 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ D.U. off ...

Page 9

... STP22NF03L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STP22NF03L inch Min Typ Max 0.173 0.181 0.024 0.034 0.044 0.066 0.019 0.027 0.6 0.62 0.050 0.393 0.409 0.094 0.106 0.194 0.202 0.048 ...

Page 11

... STP22NF03L 5 Revision history Table 7. Document revision history Date 09-Sep-2004 09-Aug-2006 20-Feb-2007 03-Sep-2007 08-Oct-2008 Revision 1 Datasheet according to PCN DSG-TRA/04/532 2 New template, no content change 3 Typo mistake on page 1 Figure 2: Safe operating area 4 Figure 2: Safe operating area 5 Revision history Changes has been update. has been update. ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP22NF03L ...

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