IRF630 STMicroelectronics, IRF630 Datasheet

MOSFET N-CH 200V 9A TO-220

IRF630

Manufacturer Part Number
IRF630
Description
MOSFET N-CH 200V 9A TO-220
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Type
Power MOSFETr
Datasheets

Specifications of IRF630

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
75W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.4Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Drain Current (max)
9A
Power Dissipation
75W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Application
High current switching, uninterruptible power supply (UPS), DC-AC converters for telecom, industrial and lighting equipment
Channel Type
N-Channel
Current, Drain
9 A
Fall Time
12 ns (Typ.)
Gate Charge, Total
31 nC
Mounting And Package Type
TO-220 Package
Operating And Storage Temperature
-65 to +150 °C
Polarization
N-Channel
Resistance, Drain To Source On
0.35 Ohm
Resistance, Thermal, Junction To Case
1.67 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-65 °C
Thermal Resistance, Junction To Ambient
62.5 °C⁄W
Time, Rise
15 ns (Typ.)
Time, Turn-on Delay
10 ns
Transconductance, Forward
4 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Gate
200 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±20 V
Rise Time
15 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2757-5

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Company
Part Number
Manufacturer
Quantity
Price
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IRF630
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Part Number:
IRF630FP
Manufacturer:
ST
0
Order codes
General features
Description
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
Applications
August 2006
Extremely high dv/dt capability
Very low intrinsic capacitances
Gate charge minimized
Switching application
IRF630FP
IRF630
Type
Part number
IRF630FP
IRF630
V
200V
200V
DSS
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP
R
<0.40Ω
<0.40Ω
DS(on)
IRF630FP
Marking
IRF630
9A
9A
I
D
Rev 9
Mesh overlay™ II Power MOSFET
Internal schematic diagram
TO-220
TO-220FP
Package
TO-220
1
2
3
IRF630FP
TO-220FP
Packaging
Tube
Tube
IRF630
1
www.st.com
2
3
1/14
14

Related parts for IRF630

IRF630 Summary of contents

Page 1

... Order codes Part number IRF630 IRF630FP August 2006 N-channel 200V - 0.35Ω TO-220/TO-220FP Mesh overlay™ II Power MOSFET R I DS(on) D <0.40Ω 9A <0.40Ω 9A Internal schematic diagram Marking IRF630 IRF630FP Rev 9 IRF630 IRF630FP TO-220 TO-220FP Package Packaging TO-220 Tube TO-220FP Tube 1/14 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ IRF630 - IRF630FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... IRF630 - IRF630FP 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) dv/dt Peak diode recovery voltage slope V Insulation winthstand voltage (DC) ...

Page 4

... Max rating @125° ±20V 10V Parameter Test conditions V > D(on 4. =25V, f=1 MHz 100V 4.7Ω (see Figure 14) V =160V =10V GS IRF630 - IRF630FP Min. Typ 200 GS ± = 250µ 4.5A 0.35 D Min. Typ. Max DS(on)max 540 = 4.5A 10V 7.5 9 Max. Unit V 1 µ ...

Page 5

... IRF630 - IRF630FP Table 6. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 3. Safe operating area for TO-220/FP Figure 5. Output characterisics 6/14 Figure 2. Thermal impedance for TO-220 Figure 4. Thermal impedance for TO-220/FP Figure 6. Transfer characteristics IRF630 - IRF630FP ...

Page 7

... IRF630 - IRF630FP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 ...

Page 8

... Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/14 IRF630 - IRF630FP ...

Page 9

... IRF630 - IRF630FP 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive load test circuit Figure 19. Switching time waveform ...

Page 10

... These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/14 IRF630 - IRF630FP www.st.com ...

Page 11

... IRF630 - IRF630FP DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 Package mechanical data inch MIN ...

Page 12

... IRF630 - IRF630FP inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.204 0.094 ...

Page 13

... IRF630 - IRF630FP 5 Revision history Table 7. Revision history Date 09-Sep-2004 03-Aug-2006 Revision 8 Complete version 9 New template, no content change Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com IRF630 - IRF630FP ...

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