STP6NK50Z STMicroelectronics, STP6NK50Z Datasheet

MOSFET N-CH 500V 5.6A TO-220

STP6NK50Z

Manufacturer Part Number
STP6NK50Z
Description
MOSFET N-CH 500V 5.6A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP6NK50Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 2.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
24.6nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Forward Transconductance Gfs (max / Min)
4.3 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.6 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4385-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP6NK50Z
Manufacturer:
STMicroelectronics
Quantity:
1 796
Part Number:
STP6NK50Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP6NK50Z
Manufacturer:
ST
0
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDER CODES
April 2004
STP6NK50Z
STF6NK50Z
STD6NK50Z
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
PART NUMBER
STD6NK50ZT4
TYPE
N-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAK
STP6NK50Z
STF6NK50Z
DS
(on) = 0.93
500 V
500 V
500 V
V
DSS
R
< 1.2
< 1.2
< 1.2
DS(on)
MARKING
P6NK50Z
D6NK50Z
F6NK50Z
Zener-Protected SuperMESH™ MOSFET
5.6 A
5.6 A
5.6 A
I
D
90 W
25 W
90 W
Pw
STP6NK50Z - STF6NK50Z
PACKAGE
TO-220FP
TO-220
DPAK
INTERNAL SCHEMATIC DIAGRAM
TO-220
DPAK
STD6NK50Z
1
TAPE & REEL
PACKAGING
3
TUBE
TUBE
TO-220FP
1
2
3
1/12

Related parts for STP6NK50Z

STP6NK50Z Summary of contents

Page 1

... ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDER CODES PART NUMBER STP6NK50Z STF6NK50Z STD6NK50ZT4 April 2004 STP6NK50Z - STF6NK50Z Zener-Protected SuperMESH™ MOSFET INTERNAL SCHEMATIC DIAGRAM MARKING ...

Page 2

... STP6NK50Z - STF6NK50Z - STD6NK50Z ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... Reverse Recovery Current I RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area defined as a constant equivalent capacitance giving the same charging time as C oss eq DSS STP6NK50Z - STF6NK50Z - STD6NK50Z =25°C UNLESS OTHERWISE SPECIFIED) CASE Test Conditions mA Max Rating ...

Page 4

... STP6NK50Z - STF6NK50Z - STD6NK50Z Safe Operating Area for TO-220 Safe Operating Area for TO-220FP Safe Operating Area for DPAK 4/12 Thermal Impedance for TO-220 Thermal Impedance for TO-220FP Thermal Impedance for DPAK ...

Page 5

... Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STP6NK50Z - STF6NK50Z - STD6NK50Z Transfer Characteristics Static Drain-source On Resistance Capacitance Variations 5/12 ...

Page 6

... STP6NK50Z - STF6NK50Z - STD6NK50Z Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/12 Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP6NK50Z - STF6NK50Z - STD6NK50Z Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/12 ...

Page 8

... STP6NK50Z - STF6NK50Z - STD6NK50Z DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q 2.65 8/12 TO-220 MECHANICAL DATA mm. TYP MAX. MIN. 4.60 0.173 0.88 0.024 1.70 0.045 0.70 0.019 15.75 0.60 10.40 0.393 2.70 ...

Page 9

... E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2 Ø 3 STP6NK50Z - STF6NK50Z - STD6NK50Z MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.5 0.045 1.5 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 .0385 3.6 ...

Page 10

... STP6NK50Z - STF6NK50Z - STD6NK50Z DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 10/12 TO-252 (DPAK) MECHANICAL DATA mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 0.8 1. inch MIN. TYP. MAX. 0.087 0.094 ...

Page 11

... P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 * on sales type STP6NK50Z - STF6NK50Z - STD6NK50Z inch MAX. 0.476 0.641 TUBE SHIPMENT (no suffix)* All dimensions are in millimeters REEL MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 330 B 1.5 ...

Page 12

... STP6NK50Z - STF6NK50Z - STD6NK50Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

Related keywords