STS10N3LH5

Manufacturer Part NumberSTS10N3LH5
DescriptionMOSFET N-CH 30V 10A 8-SOIC
ManufacturerSTMicroelectronics
SeriesSTripFET™
STS10N3LH5 datasheet
 


Specifications of STS10N3LH5

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs21 mOhm @ 5A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C10AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs4.6nC @ 5VInput Capacitance (ciss) @ Vds475pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-10010-2  
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Features
Type
V
R
DSS
DS(on)
STS10N3LH5
30 V
R
* Q
industry benchmark
DS(on)
g
Extremely low on-resistance R
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1.
Device summary
Order codes
STS10N3LH5
May 2009
N-channel 30 V, 0.019 Ω, 10 A, SO-8
STripFET™ V Power MOSFET
max
I
D
0.021 Ω
10 A
DS(on)
Figure 1.
Marking
10D3L
Doc ID 15618 Rev 1
STS10N3LH5
SO-8
Internal schematic diagram
Package
Packaging
SO-8
Tape and reel
1/13
www.st.com
13

STS10N3LH5 Summary of contents

  • Page 1

    ... Table 1. Device summary Order codes STS10N3LH5 May 2009 N-channel 30 V, 0.019 Ω SO-8 STripFET™ V Power MOSFET max I D 0.021 Ω DS(on) Figure 1. Marking 10D3L Doc ID 15618 Rev 1 STS10N3LH5 SO-8 Internal schematic diagram Package Packaging SO-8 Tape and reel 1/13 www.st.com 13 ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 15618 Rev 1 STS10N3LH5 . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

  • Page 3

    ... STS10N3LH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-Source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) E Single pulse avalanche energy AS T Operating junction temperature J T Storage temperature stg 1 ...

  • Page 4

    ... MHz (Figure 14) gate-to-source 10A gate-to- th (Figure 19 MHz gate bias Bias = 0 test signal level = 20 mV open drain Doc ID 15618 Rev 1 STS10N3LH5 Min. Typ 0.019 0.023 Min Typ. 475 - 97 19 4.6 - 1.7 1.9 0.67 - 0.84 - 2.5 Max. Unit V 1 µA 10 µA 100 nA ± ...

  • Page 5

    ... STS10N3LH5 Table 6. Switching on/off (resistive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

  • Page 6

    ... Figure 3. AM03899v1 Tj=150°C Tc=25°C Sinlge pulse 100ms 10ms (V) DS Figure 5. AM03900v1 ( ( temperature Figure 7. AM03902v1 R DS(on) (Ω) 95 120 T (°C) J Doc ID 15618 Rev 1 STS10N3LH5 Thermal impedance Transfer characteristics = Static drain-source on resistance I =13. =10V AM03901v1 V (V) GS AM03903v1 25 I (A) D ...

  • Page 7

    ... STS10N3LH5 Figure 8. Gate charge vs gate-source voltage Figure (V) V =15V =27A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 Figure 12. Source-drain diode forward characteristics V SD (V) T 1.1 1.0 0.9 0.8 T =25°C J 0.7 0.6 ...

  • Page 8

    ... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 15618 Rev 1 STS10N3LH5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

  • Page 9

    ... STS10N3LH5 Figure 19. Gate charge waveform Doc ID 15618 Rev 1 Test circuits 9/13 ...

  • Page 10

    ... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 15618 Rev 1 STS10N3LH5 ® ...

  • Page 11

    ... STS10N3LH5 DIM SO-8 MECHANICAL DATA mm. MIN. TYP MAX. 1.75 0.1 0.25 1.65 0.65 0.85 0.35 0.48 0.19 0.25 0.25 0.5 4.8 5.0 5.8 6.2 1.27 3.81 3.8 4.0 0.4 1.27 0.6 Doc ID 15618 Rev 1 Package mechanical data inch MIN. TYP. 0.003 ...

  • Page 12

    ... Revision history 5 Revision history Table 8. Document revision history Date 06-May-2009 12/13 Revision 1 First release Doc ID 15618 Rev 1 STS10N3LH5 Changes ...

  • Page 13

    ... STS10N3LH5 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...