STS10N3LH5 STMicroelectronics, STS10N3LH5 Datasheet - Page 6

• Manufacturer Part Number: STS10N3LH5
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS10N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10010-2

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
0.01
100
0.1
(norm)
(A)
BV
10
I
D
1
1.00
0.95
0.90
1.05
0.85
1.10
0.1
(A)
DSS
40
30
20
10
70
60
50
I
D
0
-55
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized BV
-30
V
GS
1
-5
=10V
1
20 45
2
DSS
70
10
3
Tj=150°C
Tc=25°C
Sinlge
pulse
95
vs temperature
6V
120
4
V
3V
DS
V
5V
T
4V
(V)
DS
J
(°C)
Doc ID 15618 Rev 1
100ms
10ms
1s
AM03899v1
AM03902v1
(V)
AM03900v1
Figure 3.
Figure 5.
Figure 7.
R
DS(on)
(A)
(Ω)
70
60
40
30
20
10
50
I
D
0
25
35
30
20
10
15
0
5
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
V
DS
2
5
=5V
I
V
D
GS
=13.5A
10
=10V
4
15
6
20
8
STS10N3LH5
25
V
GS
(V)
AM03901v1
AM03903v1
I
D
(A)