STS10N3LH5 STMicroelectronics, STS10N3LH5 Datasheet - Page 7

• Manufacturer Part Number: STS10N3LH5
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS10N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10010-2

STS10N3LH5
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
(V)
0.7
0.6
0.5
(V)
1.1
1.0
0.9
0.8
0.4
V
12
0.7
0.6
10
0.5
GS
0.8
0.4
1.1
1.0
0.9
SD
6
4
2
8
0
-55
0
0
T
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
-30
J
=25°C
V
DD
5
I
D
-5
=15V
=27A
2
20 45
10
4
15
70
T
J
=-55°C
95 120 145
20
T
6
J
=175°C
25
Q
Doc ID 15618 Rev 1
g
I
SD
(nC)
AM03908v1
T
AM03904v1
AM03906v1
J
(A)
(°C)
Figure 11. Normalized on resistance vs
(norm)
R
DS(on)
310
210
110
(pF)
610
510
410
810
710
0.6
0.4
0.8
1.8
1.6
1.4
1.2
1.0
10
C
-55
0
Capacitance variations
Crss
temperature
-30
-5
10
20 45
T J =25°C
f=1MHz
Electrical characteristics
70
20
95
120
T
V
J
DS
(°C)
AM03907v1
AM03905v1
(V)
Ciss
Coss
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