STB8NM60D STMicroelectronics, STB8NM60D Datasheet
STB8NM60D
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STB8NM60D Summary of contents
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... STB8NM60D STP8NM60D February 2006 N-CHANNEL 600V - 0.9Ω TO-220/D Fast Diode MDmesh™ Power MOSFET TOT 8A 100W 8A 100W Internal schematic diagram Marking B8NM60D P8NM60D Rev2 STB8NM60D STP8NM60D D²PAK TO-220 Package Packaging D²PAK TAPE & REEL TO-220 TUBE 2 PAK 3 1 1/13 www.st.com ...
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... Single pulse avalanche energy (starting E AS Tj=25°C, I 2/13 Parameter = 20kΩ 25°C C =100° 25°C C =80%V DD (BR)DSS Parameter Parameter = =50V Rev2 STB8NM60D - STP8NM60D Value Unit 600 V 600 V ± 100 W 0.8 W/°C 20 V/ns -65 to 150 °C Value Unit 1.25 °C/W 62.5 ° ...
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... STB8NM60D - STP8NM60D 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-Source Breakdown V (BR)DSS Voltage Zero Gate Voltage Drain I DSS Current (V Gate Body Leakage Current I GSS ( Gate Threshold Voltage GS(th) Static Drain-Source On R DS(on) Resistance Table 5. Dynamic Symbol ...
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... V G (see Figure 12) V =480V =4.7Ω (see Figure 12) Parameter Test Condictions I =5A =5A, di/dt = 100A/µ =50 V, Tj=25° =5A, di/dt = 100A/µ =50 V, Tj=150°C DD Rev2 STB8NM60D - STP8NM60D Min. Typ. 13 =2.5A =10V =5A =10V Min. Typ. =0 107 330 6 178 640 7 Max. Unit ...
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... STB8NM60D - STP8NM60D 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance Electrical characteristics Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance Rev2 5/13 ...
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... Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics 6/13 STB8NM60D - STP8NM60D Capacitance variations Figure 10. Normalized on resistance vs temperature Rev2 ...
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... STB8NM60D - STP8NM60D 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform ...
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... These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 8/13 STB8NM60D - STP8NM60D www.st.com Rev2 ...
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... STB8NM60D - STP8NM60D DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 Rev2 ...
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... Rev2 STB8NM60D - STP8NM60D inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.036 0.044 0.067 0.017 0.023 0.048 0.053 0.352 0.368 0.315 ...
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... STB8NM60D - STP8NM60D 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 12.1 P2 1.9 2 0.25 0.35 0.0098 0.0137 W 23.7 24 sales type TAPE AND REEL SHIPMENT inch MIN ...
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... Revision history 6 Revision history Table 8. Document revision history Date 13-Jan-2006 15-Feb-2006 12/13 Revision 1 Initial release. 2 Modified Description on first page Rev2 STB8NM60D - STP8NM60D Changes ...
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... STB8NM60D - STP8NM60D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...