STS15N4LLF3 STMicroelectronics, STS15N4LLF3 Datasheet
STS15N4LLF3
Specifications of STS15N4LLF3
Available stocks
Related parts for STS15N4LLF3
STS15N4LLF3 Summary of contents
Page 1
... Applications ■ Switching application Order codes Part number STS15N4LLF3 November 2006 N-channel 40V - 0.0042Ω - 15A - SO-8 I DS(on) D 15A Internal schematic diagram Marking 15N4LL- Rev 2 STS15N4LLF3 STripFET™ Power MOSFET SO-8 Package Packaging SO-8 Tape & reel 1/12 www.st.com 12 ...
Page 2
... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history 2/ STS15N4LLF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
Page 3
... STS15N4LLF3 1 Electrical ratings Table 1. Absolute maximim ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT (3) E Single pulse avalanche energy AS 1. Guaranteed for test time < 15ms 2 ...
Page 4
... Figure 13) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain Parameter Test conditions V = 20V 4.7Ω (see Figure 15 20V 4.7Ω (see Figure 15) STS15N4LLF3 Min. Typ. Max ± = 250µ 7.5A 0.0042 0.005 = 7.5A 0.005 0.007 Min. Typ. 2530 574 29 = 15A 21 ...
Page 5
... STS15N4LLF3 Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% ...
Page 6
... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Normalized B VDSS 6/12 Figure 2. Figure 4. vs temperature Figure 6. STS15N4LLF3 Thermal impedance Transfer characteristics Static drain-source on resistance ...
Page 7
... STS15N4LLF3 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...
Page 8
... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform STS15N4LLF3 ...
Page 9
... STS15N4LLF3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
Page 10
... STS15N4LLF3 inch MIN. TYP. 0.003 0.025 0.013 0.007 0.010 45 (typ.) 0.188 0.228 0.050 0.150 0.14 0.015 8 (max.) MAX. 0.068 0.009 0.064 ...
Page 11
... STS15N4LLF3 5 Revision history Table 7. Revision history Date 09-Jun-2006 22-Nov-2006 Revision 1 First release 2 Corrected part number Revision history Changes 11/12 ...
Page 12
... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STS15N4LLF3 ...