STP55NF06 STMicroelectronics, STP55NF06 Datasheet - Page 10

• Manufacturer Part Number: STP55NF06
• Description: MOSFET N-CH 60V 50A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP55NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Dc: 1120
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2777-5

Test circuit
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Figure 20. Diode recovery times waveform
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