STP55NF06 STMicroelectronics, STP55NF06 Datasheet - Page 14

• Manufacturer Part Number: STP55NF06
• Description: MOSFET N-CH 60V 50A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP55NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Dc: 1120
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2777-5

Package mechanical data
14/18
DIM.
L20
L30
H1
øP
b1
e1
J1
L1
Q
A
D
E
F
b
c
e
L
15.25
MIN.
4.40
0.61
1.15
0.49
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
TO-220 MECHANICAL DATA
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
16.40
28.90
mm.
TYP
MAX.
15.75
10.40
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.045
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
MIN.
0.60
0.645
1.137
TYP.
inch
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116