STP55NF06 STMicroelectronics, STP55NF06 Datasheet - Page 4

MOSFET N-CH 60V 50A TO-220

STP55NF06

Manufacturer Part Number
STP55NF06
Description
MOSFET N-CH 60V 50A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP55NF06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
110000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Dc
1120
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2777-5

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Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
I
V
V
T
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= max ratings
= max ratings,
= ± 20V
= V
= 10V, I
= 15V, I
= 25V, f = 1MHz,
= 0
= 30V, I
= 48V, I
= 10V
Figure
Figure
GS
, I
D
14)
15)
D
GS
D
D
D
GS
= 27.5A
= 27.5A
= 27.5A
= 55A,
= 250µA
= 10V
=0
Min.
Min.
60
2
0.015
1300
Typ.
Typ.
44.5
10.5
17.5
300
105
18
20
50
36
15
3
0.018
Max.
Max.
±100
60
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V

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