IRLU2908PBF International Rectifier, IRLU2908PBF Datasheet

IRLU2908PBF

Manufacturer Part Number

IRLU2908PBF

Description

MOSFET N-CH 80V 30A I-PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRLR2908TRLPBF.pdf (11 pages)

Specifications of IRLU2908PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

28 mOhm @ 23A, 10V

Drain To Source Voltage (vdss)

80V

Current - Continuous Drain (id) @ 25° C

30A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

33nC @ 4.5V

Input Capacitance (ciss) @ Vds

1890pF @ 25V

Power - Max

120W

Mounting Type

Through Hole

Package / Case

IPak, TO-251, DPak, VPak (3 straight leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRLU2908PBF

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Description

This HEXFET ® Power MOSFET utilizes the latest processing techniques

to achieve extremely low on-resistance per silicon area. Additional features

of this HEXFET power MOSFET are a 175°C junction operating temperature,

low R JC, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared,

or wave soldering techniques. The straight lead version (IRFU series) is

for through-hole mounting applications. Power dissipation levels up to 1.5

watts are possible in typical surface mount applications.

Features

dv/dt

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

(tested)

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

Parameter

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

@ 10V

jÃ

(Package Limited)

300 (1.6mm from case )

See Fig.12a,12b,15,16

HEXFET

Typ.

–––

IRLR2908PbF

-55 to + 175

D-Pak

Max.

0.77

IRLR2908PbF

IRLU2908PbF

± 16

150

120

180

250

2.3

Power MOSFET

Max.

DS(on)

110

1.3

DSS

IRLU2908PbF

= 30A

PD - 95552B

I-Pak

= 28m

= 80V

Units

W/°C

°C/W

V/ns

°C

Related parts for IRLU2908PBF

IRLU2908PBF Summary of contents

Page 1

... Limited Parameter jÃ 95552B IRLR2908PbF IRLU2908PbF ® HEXFET Power MOSFET 80V DSS R = 28m DS(on 30A D S I-Pak D-Pak IRLU2908PbF IRLR2908PbF Max. Units 150 120 W 0.77 W/°C ± 180 mJ 250 See Fig.12a,12b,15, 2.3 V/ns - 175 °C 300 (1.6mm from case ) Typ. ...

Page 2

... Q Reverse Recovery Charge rr t Forward Turn-On Time on ˆ Notes through are on page 11 ® HEXFET is a registered trademark of International Rectifier. 2 Min. Typ. Max. Units 80 ––– ––– 0V ––– 0.085 ––– V/°C Reference to 25°C, I – ...

Page 3

VGS TOP 15V 10V 4.5V 100 4.0V 3.5V 3.0V 2.7V BOTTOM 2. 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current vs.Pulsewidth 200 TOP Single Pulse BOTTOM 10% Duty Cycle 23A 150 100 ...

Page 8

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 2001 SEMB LY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position ...

Page 10

E XAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 SEMBLY LINE "A" Note: "P" embly line pos ition indicates Lead-Free" OR ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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