STP5NK52ZD STMicroelectronics, STP5NK52ZD Datasheet

MOSFET N-CH 520V 4.4A TO-220

STP5NK52ZD

Manufacturer Part Number
STP5NK52ZD
Description
MOSFET N-CH 520V 4.4A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP5NK52ZD

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
520V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16.9nC @ 10V
Input Capacitance (ciss) @ Vds
529pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 Ohms
Drain-source Breakdown Voltage
520 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.4 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5953-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP5NK52ZD
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP5NK52ZD
Manufacturer:
ST
0
Part Number:
STP5NK52ZD������
Manufacturer:
ST
0
N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I
Features
Application
Description
The SuperFREDMesh™ series associates all
advantages of reduced on-resistance, zener gate
protection and very high dv/dt capability with a
fast body-drain recovery diode. Such series
complements the “FDmesh™” advanced
technology.
Table 1.
September 2008
STB5NK52ZD-1
STD5NK52ZD-1
STD5NK52ZD
STP5NK52ZD
STF5NK52ZD
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Improved ESD capability
Switching applications
STD5NK52ZD-1
STB5NK52ZD-1
Type
STD5NK52ZD
STP5NK52ZD
STF5NK52ZD
Order codes
Device summary
520 V
520 V
520 V
520 V
520 V
V
DSS
R
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
DS(on)
max
Zener-protected SuperMESH™ Power MOSFET
B5NK52ZD
D5NK52ZD
D5NK52ZD
P5NK52ZD
F5NK52ZD
Marking
4.4 A
4.4 A
4.4 A
4.4 A
4.4 A
I
D
STD5NK52ZD, STB5NK52ZD-1
70 W
70 W
70 W
25 W
70 W
Pw
STF5NK52ZD,STP5NK52ZD
Rev 5
Figure 1.
TO-220FP
Package
TO-220
DPAK
I²PAK
IPAK
G(1)
Internal schematic diagram
2
PAK,DPAK,TO-220FP
D(2)
S(3)
Tape and reel
Packaging
Tube
Tube
Tube
Tube
www.st.com
AM01476v1
1/17
17

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STP5NK52ZD Summary of contents

Page 1

... Such series complements the “FDmesh™” advanced technology. Table 1. Device summary Order codes STB5NK52ZD-1 STD5NK52ZD-1 STD5NK52ZD STF5NK52ZD STP5NK52ZD September 2008 STD5NK52ZD, STB5NK52ZD-1 STF5NK52ZD,STP5NK52ZD Figure 1. ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB5NK52ZD-1, STD/F/P5NK52ZD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) ...

Page 4

Electrical characteristics 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 5. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage V ...

Page 5

STB5NK52ZD-1, STD/F/P5NK52ZD Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / I²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating area for IPAK/DPAK Figure 7. 6/17 STB5NK52ZD-1, STD/F/P5NK52ZD Figure 3. Thermal impedance for TO-220 ...

Page 7

STB5NK52ZD-1, STD/F/P5NK52ZD Figure 8. Output characteristics Figure 10. Normalized B VDSS Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 9. vs temperature Figure 11. Static drain-source on resistance Electrical characteristics Transfer characteristics 7/17 ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/17 STB5NK52ZD-1, STD/F/P5NK52ZD Figure 15. Normalized on resistance vs temperature Figure 17. Maximum avalanche energy vs temperature ...

Page 9

STB5NK52ZD-1, STD/F/P5NK52ZD 3 Test circuits Figure 18. Switching times test circuit for resistive load D.U. Figure 20. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STB5NK52ZD-1, STD/F/P5NK52ZD Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 ...

Page 12

Package mechanical data Dim Dia 12/17 TO-220FP mechanical data mm. Min. Typ Max. 4.40 4.60 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1.00 1.15 ...

Page 13

STB5NK52ZD-1, STD/F/P5NK52ZD DIM (L1 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0.80 ...

Page 14

Package mechanical data DIM 14/17 TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 ...

Page 15

STB5NK52ZD-1, STD/F/P5NK52ZD 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 K0 ...

Page 16

Revision history 6 Revision history Table 10. Document revision history Date 16-Jun-2005 06-Sep-2005 03-Oct-2005 23-Mar-2006 15-Sep-2008 16/17 Revision 1 First release 2 Inserted ecopack indication Table 2 3 Corrected value on 4 Complete version. New template 5 Inserted new package: ...

Page 17

... STB5NK52ZD-1, STD/F/P5NK52ZD Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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