IRFZ34NPBF International Rectifier, IRFZ34NPBF Datasheet
IRFZ34NPBF
Specifications of IRFZ34NPBF
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IRFZ34NPBF Summary of contents
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... STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRFZ34NPbF HEXFET Max. @ 10V GS @ 10V GS 0.45 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Min. –––– ...
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... IRFZ34NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... BOTTOM 4. 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.6 1.2 0.8 0.4 = 25V 0 -60 -40 -20 Fig 4. Normalized On-Resistance IRFZ34NPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH T = 175° Drain-to-Source Voltage ( 26A V = 10V 100 120 140 160 180 T , Junction Temperature (° ...
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... IRFZ34NPbF 1200 1MHz iss rss gd 1000 iss oss ds gd 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175° 25° 0.4 0.8 1 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRFZ34NPbF D.U. d(on) r d(off) f ...
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... IRFZ34NPbF V DS D.U. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 140 L 120 + 100 0.01Ω (BR)DSS 25 Starting T , Junction Temperature (° Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b ...
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... Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% Fig 14. For N-Channel HEXFETS IRFZ34NPbF + + P.W. Period * V =10V ...
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... IRFZ34NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 1 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...