IRF6611 International Rectifier, IRF6611 Datasheet

MOSFET N-CH 30V 32A DIRECTFET

IRF6611

Manufacturer Part Number
IRF6611
Description
MOSFET N-CH 30V 32A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6611

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.6 mOhm @ 27A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 4.5V
Input Capacitance (ciss) @ Vds
4860pF @ 15V
Power - Max
3.9W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6611TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6611TR1
Manufacturer:
IR
Quantity:
1 710
l
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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

ƒ
Description
The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R
dt immunity for synchronous FET applications.
Notes:
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
Dual Sided Cooling Compatible 
Ideal for CPU Core DC-DC Converters
RoHS compliant containing no lead or bromide 
Low Profile (<0.7 mm)
Ultra Low Package Inductance
Optimized for High Frequency Switching above 1MHz 
Optimized for SyncFET Socket of Sync. Buck Converter
Low Conduction Losses
Compatible with Existing Surface Mount Techniques 
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
@ T
@ T
@ T
SQ
20
15
10
A
A
C
5
0
= 25°C
= 70°C
= 25°C
0
Fig 1. Typical On-Resistance vs. Gate Voltage
1
SX
V GS, Gate -to -Source Voltage (V)
T J = 25°C
2
3
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
4
, gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R
5
6
T J = 125°C
Ãe
7
e
I D = 27A
Parameter
8
GS
GS
GS
MQ
9
@ 10V
@ 10V
@ 10V
f
10
k
MX
30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V
Q
37nC
Starting T
Surface mounted on 1 in. square Cu board, steady state.
T
V
g tot
C
DSS
measured with thermocouple mounted to top (Drain) of part.
6.0
5.0
4.0
3.0
2.0
1.0
0.0
MT

0
J
Fig 2. Typical On-Resistance vs. Gate Voltage
12nC
= 25°C, L = 0.91mH, R
Q
I D = 22A
gd
V
MX
GS
DirectFET™ Power MOSFET ‚
10
Q G Total Gate Charge (nC)
3.3nC
Q
gs2
V DS = 24V
V DS = 15V
Max.
20
150
220
310
±20
30
32
26
22
TM
R
packaging to achieve the lowest
DS(on)
G
16nC
Q
= 25Ω, I
rr
30
IRF6611
DirectFET™ ISOMETRIC
AS
23nC
Q
DS(on)
= 22A.
oss
40
R
and high Cdv/
DS(on)
Units
V
mJ
1.7V
V
A
A
11/17/05
gs(th)
50
1

Related parts for IRF6611

IRF6611 Summary of contents

Page 1

... IMPROVING previous best thermal resistance by 80%. The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° Power Dissipation 25° Peak Soldering Temperature P Operating Junction and T J Storage Temperature Range ...

Page 4

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤ 60µs PULSE WIDTH 100 25°C ...

Page 5

150° 25° 40°C 0 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 160 Limited by package 140 120 ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, MX Outline ƒ (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details ...

Page 8

DirectFET™ Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC CODE ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6611). For 1000 parts on 7" reel, order IRF6611TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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