IRFB3806PBF International Rectifier, IRFB3806PBF Datasheet

IRFB3806PBF

Manufacturer Part Number

IRFB3806PBF

Description

MOSFET N-CH 60V 43A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFB3806PBF.pdf (11 pages)

Specifications of IRFB3806PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

15.8 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

43A

Vgs(th) (max) @ Id

4V @ 50µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

1150pF @ 50V

Power - Max

71W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

N Channel

Continuous Drain Current Id

43A

Drain Source Voltage Vds

60V

On Resistance Rds(on)

12.6mohm

Rds(on) Test Voltage Vgs

20V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

43 A

Power Dissipation

71 W

Mounting Style

Through Hole

Gate Charge Qg

22 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB3806PBF

Manufacturer:

International Rectifier

Quantity:

27 742

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFB3806PBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRFB3806PBF

Quantity:

25 780

Current page: 1 of 11
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Applications

Benefits

www.irf.com

dv/dt

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

High Efficiency Synchronous Rectification in

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

Fully Characterized Capacitance and

Avalanche SOA

Enhanced body diode dV/dt and dI/dt

Capability

SMPS

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V

Pulsed Drain Current c

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery e

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy d

Avalanche Current c

Repetitive Avalanche Energy f

Junction-to-Case j

Case-to-Sink, Flat Greased Surface, TO-220

Junction-to-Ambient, TO-220 ij

Junction-to-Ambient (PCB Mount) , D

Parameter

@ 10V

Pak ij

IRFB3806PbF

TO-220AB

Gate

DSS

DS(on)

Typ.

0.50

–––

10lbxin (1.1Nxm)

IRFSL3806PbF

-55 to + 175

typ.

max.

IRFB3806PbF

IRFS3806PbF

Max.

0.47

170

± 20

300

Drain

HEXFET Power MOSFET

7.1

Pak

Max.

2.12

–––

12.6m Ω

15.8m Ω

Source

43A

IRFSL3806PbF

60V

TO-262

Units

W/°C

°C/W

V/ns

°C

02/29/08

Related parts for IRFB3806PBF

IRFB3806PBF Summary of contents

Page 1

... V D DSS R DS(on TO-220AB IRFB3806PbF G Gate @ 10V GS Typ. ––– 0.50 ––– 2 Pak ij ––– IRFB3806PbF IRFS3806PbF IRFSL3806PbF HEXFET Power MOSFET 60V 12.6m Ω typ. 15.8m Ω max. 43A Pak TO-262 IRFS3806PbF IRFSL3806PbF D S Drain Source Max ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

175° 25°C 1 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, ...

Page 6

50µ 250µ 1.0mA 2 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ( ...

Page 7

D.U.T + ƒ ‚ - R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

Y6HQG ) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" TO-220AB packages are not recommended for Surface Mount Application. 8 DIU SI6UDPI6G S 8UDAD S ...

Page 9

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ 25 www.irf.com DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

Page 10

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃ ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD ...

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