IRFB3806PBF International Rectifier, IRFB3806PBF Datasheet - Page 3

• Manufacturer Part Number: IRFB3806PBF
• Description: MOSFET N-CH 60V 43A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3806PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1150pF @ 50V
• Power - Max: 71W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 43A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.6mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 43 A
• Power Dissipation: 71 W
• Mounting Style: Through Hole
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
10000
1000
1000
1000
100
100
100
0.1
10
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
2
1
Fig 1. Typical Output Characteristics
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
3
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4
4.5V
1
C oss
C rss
C iss
T J = 25°C
5
V DS = 25V
≤ 60µs PULSE WIDTH
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
6
10
7
8
100
100
9
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
12.0
10.0
100
2.5
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
10
1
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 25A
V GS = 10V
I D = 25A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
5
Q G , Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
V DS = 48V
V DS = 30V
V DS = 12V
1
10
4.5V
≤ 60µs PULSE WIDTH
Tj = 175°C
15
10
20
100
25
3