IRFB3806PBF International Rectifier, IRFB3806PBF Datasheet - Page 4

• Manufacturer Part Number: IRFB3806PBF
• Description: MOSFET N-CH 60V 43A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3806PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1150pF @ 50V
• Power - Max: 71W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 43A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.6mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 43 A
• Power Dissipation: 71 W
• Mounting Style: Through Hole
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
Fig 9. Maximum Drain Current vs. Case Temperature
100
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0.0
0.1
10
45
40
35
30
25
20
15
10
5
0
1
-10
0.0
25
Fig 11. Typical C
T J = 175°C
0
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0.5
10
75
20
T J = 25°C
100
1.0
30
OSS
40
125
Stored Energy
1.5
V GS = 0V
50
150
60
175
2.0
70
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
300
250
200
150
100
100
0.1
10
80
75
70
65
60
50
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
100
10
DC
10msec
1msec
TOP
BOTTOM 25A
125
100µsec
150
I D
5.1A
2.8A
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100
175