IRFB3806PBF International Rectifier, IRFB3806PBF Datasheet - Page 6

• Manufacturer Part Number: IRFB3806PBF
• Description: MOSFET N-CH 60V 43A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3806PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1150pF @ 50V
• Power - Max: 71W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 43A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.6mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 43 A
• Power Dissipation: 71 W
• Mounting Style: Through Hole
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4.0
3.5
3.0
2.5
2.0
1.5
1.0
14
12
10
Fig 16. Threshold Voltage vs. Temperature
8
6
4
2
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
0
I D = 50µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
I F = 25A
V R = 51V
T J = 25°C
T J = 125°C
200
T J , Temperature ( °C )
400
di F /dt (A/µs)
600
800
260
210
160
110
60
10
f
1000
0
I F = 25A
V R = 51V
T J = 25°C
T J = 125°C
200
400
di F /dt (A/µs)
600
800
260
210
160
110
60
10
14
12
10
8
6
4
2
0
f
0
0
1000
I F = 17A
V R = 51V
T J = 25°C
T J = 125°C
I F = 17A
V R = 51V
T J = 25°C
T J = 125°C
200
200
di F /dt (A/µs)
di F /dt (A/µs)
400
400
600
600
800
800
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f
1000
1000
f