STP3NK60Z STMicroelectronics, STP3NK60Z Datasheet - Page 2

MOSFET N-CH 600V 2.4A TO-220

STP3NK60Z

Manufacturer Part Number
STP3NK60Z
Description
MOSFET N-CH 600V 2.4A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP3NK60Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
11.8nC @ 10V
Input Capacitance (ciss) @ Vds
311pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
3.6ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
3.6 Ohms
Forward Transconductance Gfs (max / Min)
1.8 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.4 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7525-5
STP3NK60Z

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STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/15
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
DS
GS
AS
GSO
D
D
2.4 A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
j
= 25 °C, I
DD
V
Parameter
(BR)DSS
D
C
GS
= I
= 25°C
GS
, T
j
= 20 k )
max)
AR
j
Parameter
= 0)
, V
T
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
STP3NK60Z
STB3NK60Z
1.51
0.36
2.4
9.6
45
-
TO-220
D
2.78
2
PAK
STP3NK60ZFP
-55 to 150
62.5
1.51 (*)
2.4 (*)
9.6 (*)
Value
2100
2500
Min.
± 30
0.16
600
600
4.5
30
20
TO-220FP
300
6.25
Max Value
150
Typ.
2.4
STD3NK60Z-1
STD3NK60Z
1.51 (*)
2.4 (*)
9.6 (*)
0.36
45
DPAK
-
IPAK
2.78
100
Max.
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
V
A
V

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