IRF6726MTR1PBF International Rectifier, IRF6726MTR1PBF Datasheet

IRF6726MTR1PBF

Manufacturer Part Number

IRF6726MTR1PBF

Description

MOSFET N-CH 30V 32A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6726MTR1PBF.pdf (9 pages)

Specifications of IRF6726MTR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.7 mOhm @ 32A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

32A

Vgs(th) (max) @ Id

2.35V @ 150µA

Gate Charge (qg) @ Vgs

77nC @ 4.5V

Input Capacitance (ciss) @ Vds

6140pF @ 15V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MT

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.4 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

180 A

Power Dissipation

89 W

Gate Charge Qg

51 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6726MTR1PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6726MTR1PBF

Manufacturer:

Quantity:

5 000

Current page: 1 of 9
Download datasheet (257Kb)

Description

The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-

age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6726MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6726MPbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

www.irf.com

Absolute Maximum Ratings

RoHS Compliant Containing No Lead and Bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for both Sync.FET and some Control FET

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

100% Rg tested

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

application

@ T

Fig 1. Typical On-Resistance vs. Gate Voltage

= 25°C

= 70°C

= 25°C

T J = 25°C

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

Ãg

I D = 32A

Parameter

@ 10V

„

…

†

30V max ±20V max

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

51nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

5.0

4.0

3.0

2.0

1.0

0.0

= 25°C, L = 0.82mH, R

16nC

I D = 25A

IRF6726MTRPbF

DirectFET™ Power MOSFET ‚

Q G , Total Gate Charge (nC)

IRF6726MPbF

5.4nC

V DS = 24V

V DS = 15V

gs2

1.3mΩ@10V

Max.

180

250

260

±20

DS(on)

45nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

28nC

= 25A.

1.9mΩ@ 4.5V

oss

DS(on)

Units

08/14/07

1.7V

gs(th)

Related parts for IRF6726MTR1PBF

IRF6726MTR1PBF Summary of contents

Page 1

RoHS Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized ...

Page 2

IRF6726MPbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J Storage Temperature Range ...

Page 4

IRF6726MPbF 1000 100 10 2.5V 1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150°C ...

Page 5

150°C 100 25° -40° 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

IRF6726MPbF DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G ...

Page 8

IRF6726MPbF ™ DirectFET™ Part Marking 8 DIMENSIONS METRIC CODE MIN MAX A 6.35 0.246 6.25 B 5.05 0.189 4.80 3.95 0.152 C 3.85 0.45 D 0.35 0.014 0.82 E 0.031 0.78 F 0.92 0.035 0.88 1.82 0.070 G 1.78 1.02 ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6726MTRPBF). For 1000 parts on 7" reel, order IRF6726MTR1PBF CODE NOTE: CONTROLLING DIMENSIONS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www ...

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