IRF6724MTR1PBF International Rectifier, IRF6724MTR1PBF Datasheet

MOSFET N-CH 30V 27A DIRECTFET

IRF6724MTR1PBF

Manufacturer Part Number
IRF6724MTR1PBF
Description
MOSFET N-CH 30V 27A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6724MTR1PBF.pdf (9 pages)

Specifications of IRF6724MTR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.5 mOhm @ 27A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
54nC @ 4.5V
Input Capacitance (ciss) @ Vds
4404pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6724MTR1PBFTR
l
l
l
l
l
l
l
l
l
l
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚
ƒ
Description
The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6724MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6724MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6724MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
RoHs Compliant and Halogen Free 
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
A
A
C
= 25°C
= 70°C
= 25°C
8
6
4
2
0
2.0
Fig 1. Typical On-Resistance Vs. Gate Voltage
SX
V GS , Gate-to-Source Voltage (V)
4.0
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
6.0
T J = 125°C
T J = 25°C
Ãg
8.0
I D = 27A
g
Parameter
GS
GS
GS
MQ
10.0
@ 10V
@ 10V
@ 10V
h
f
MX
„
…
†
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
Q
33nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
measured with thermocouple mounted to top (Drain) of part.
DSS
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
MT
12
10
8
6
4
2
0

J
0
= 25°C, L = 0.051mH, R
10nC
Q
IRF6724MTRPbF
I D = 21A
gd
V
MX
DirectFET™ Power MOSFET ‚
GS
MP
20
Q G Total Gate Charge (nC)
IRF6724MPbF
3.9nC
Q
gs2
Max.
40
V DS = 24V
VDS= 15V
150
212
±20
30
27
21
12
21
R
DS(on)
34nC
G
Q
= 25Ω, I
60
DirectFET™ ISOMETRIC
rr
TM
packaging to achieve
AS
20nC
Q
80
= 21A.
oss
R
DS(on)
Units
100
V
mJ
04/30/09
1.8V
V
A
A
gs(th)
1

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IRF6724MTR1PBF Summary of contents

Page 1

RoHs Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Sync. ...

Page 2

IRF6724MPbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation D C Peak Soldering Temperature Operating Junction and J T Storage Temperature ...

Page 4

IRF6724MPbF 1000 100 10 2.5V 1 ≤60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 150° 25° -40°C ...

Page 5

150°C 100 25° -40°C 10.0 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 100 ...

Page 6

IRF6724MPbF DUT 0 1K Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test ...

Page 7

D.U.T + ƒ • • - • + ‚ „  • G • • SD • Fig 18. ™ www.irf.com Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current + D.U.T. ...

Page 8

IRF6724MPbF ™ Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations ™ 6724 8 DIMEN SION S ME TRIC CO DE MIN 6.25 6.35 B 4.80 5.05 C 3.85 3.95 D 0.35 0.45 ...

Page 9

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6714MTRPBF). For 1000 parts on 7" reel, order IRF6714MTR1PBF STANDARD OPTION (QTY 4800) CODE NOTE: CONTROLLING DIMENSIONS IN ...

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