IRF6729MTR1PBF International Rectifier, IRF6729MTR1PBF Datasheet

IRF6729MTR1PBF

Manufacturer Part Number

IRF6729MTR1PBF

Description

MOSFET N-CH 30V 31A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6729MTR1PBF.pdf (9 pages)

Specifications of IRF6729MTR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.8 mOhm @ 31A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

31A

Vgs(th) (max) @ Id

2.35V @ 150µA

Gate Charge (qg) @ Vgs

63nC @ 4.5V

Input Capacitance (ciss) @ Vds

6030pF @ 15V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.7 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

190 A

Power Dissipation

104 W

Gate Charge Qg

42 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6729MTR1PBFTR

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6729MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6729MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to

reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further

reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC

converters that power high current loads such as the latest generation of microprocessors. The IRF6729MPbF has been optimized for

parameters that are critical in synchronous buck converter’s Sync FET sockets.

‚

www.irf.com

Absolute Maximum Ratings

RoHs Compliant and Halogen-Free

Integrated Monolithic Schottky Diode

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for Sync. FET socket of Sync. Buck Converter

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

100% Rg tested

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

Fig 1. Typical On-Resistance vs. Gate Voltage

= 25°C

= 70°C

= 25°C

V GS, Gate -to -Source Voltage (V)

T J = 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

Ãg

Parameter

I D = 31A

@ 10V

HEXFET

„

…

†

30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

42nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

Power MOSFET plus Schottky Diode ‚

14nC

= 25°C, L = 0.83mH, R

I D = 25A

IRF6729MTRPbF

Q G Total Gate Charge (nC)

IRF6729MPbF

4.9nC

gs2

V DS = 24V

V DS = 15V

Max.

190

250

260

±20

DS(on)

40nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

29nC

= 25A.

oss

100

DS(on)

Units

04/02/09

1.8V

gs(th)

120

Related parts for IRF6729MTR1PBF

IRF6729MTR1PBF Summary of contents

Page 1

RoHs Compliant and Halogen-Free l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150°C ...

Page 5

150° 25° -40°C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G ...

Page 8

DirectFET™ Part Marking 8 DIMENSIONS METRIC CODE MIN MAX A 6.25 6.35 B 4.80 5.05 C 3.85 3.95 D 0.35 0.45 E 0.68 0.72 F 0.68 0.72 G 1.38 1.42 H 0.80 0.84 J 0.38 0.42 K 0.88 1.01 ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6729MTRPBF). For 1000 parts on 7" reel, order IRF6729MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

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