IRLU2905ZPBF International Rectifier, IRLU2905ZPBF Datasheet

MOSFET N-CH 55V 42A I-PAK

IRLU2905ZPBF

Manufacturer Part Number
IRLU2905ZPBF
Description
MOSFET N-CH 55V 42A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRLU2905ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 36A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 5V
Input Capacitance (ciss) @ Vds
1570pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
11mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
22.5 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
60 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
23 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLU2905ZPBF
Features
Description
This HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
HEXFET
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
@ T
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
is a registered trademark of International Rectifier.
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Power MOSFET utilizes the latest
j
Ã
j
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
ij
(Silicon Limited)
(Package Limited)
h
G
IRLR2905ZPbF
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
D-Pak
300 (1.6mm from case )
–––
–––
–––
10 lbf
D
S
IRLR2905ZPbF
IRLU2905ZPbF
-55 to + 175
y
Max.
in (1.1N
0.72
± 16
240
110
60
43
42
57
85
®
R
IRLU2905ZPbF
DS(on)
Power MOSFET
V
y
m)
Max.
DSS
I
1.38
110
I-Pak
D
40
= 42A
= 13.5m
PD - 95774B
= 55V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRLU2905ZPBF Summary of contents

Page 1

... GS @ 10V (Package Limited Parameter 95774B IRLR2905ZPbF IRLU2905ZPbF ® HEXFET Power MOSFET 55V DSS R = 13.5m DS(on 42A D S I-Pak D-Pak IRLU2905ZPbF Max. Units 240 110 W 0.72 W/°C ± See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ. Max. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 3. Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100.0 10 10V 60µs PULSE WIDTH 1.0 2.0 3.0 4.0 5.0 6.0 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = Ciss 1500 1000 500 Coss ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 60 TOP Single Pulse BOTTOM 1% Duty Cycle 36A ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates ...

Page 10

EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 SEMBLY LINE "A" Note: "P" embly line pos ition indicates Lead-Free" OR ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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