STP3N62K3 STMicroelectronics, STP3N62K3 Datasheet - Page 14

MOSFET N-CH 620V 2.7A TO-220

STP3N62K3

Manufacturer Part Number
STP3N62K3
Description
MOSFET N-CH 620V 2.7A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP3N62K3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
385pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.5 Ohm @ 10 V
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.7 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8449-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP3N62K3
Manufacturer:
STMicroelectronics
Quantity:
1 995
Part Number:
STP3N62K3
Manufacturer:
TOSHIBA
Quantity:
3 000
Part Number:
STP3N62K3
Manufacturer:
ST
0
Package mechanical data
14/20
DIM.
(L1)
A1
b2
b4
e1
L2
V1
c2
D
H
A
b
E
e
L
c
STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
TO-251 (IPAK) mechanical data
Doc ID 14894 Rev 2
16.10
2.28
0.80
mm.
10
typ
o
0068771_H
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20

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