STP3N62K3 STMicroelectronics, STP3N62K3 Datasheet - Page 4

• Manufacturer Part Number: STP3N62K3
• Description: MOSFET N-CH 620V 2.7A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP3N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 385pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8449-5

Electrical ratings
4/20
Table 4.
Symbol
E
I
AR
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Avalanche characteristics
j
= 25 °C, I
STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
Parameter
D
Doc ID 14894 Rev 2
= I
j
max)
AR
, V
DD
= 50 V)
Max value
100
2.7
Unit
mJ
A