STP3N62K3 STMicroelectronics, STP3N62K3 Datasheet - Page 5

• Manufacturer Part Number: STP3N62K3
• Description: MOSFET N-CH 620V 2.7A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP3N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 385pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8449-5

STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
2
Electrical characteristics
(T
Table 5.
Table 6.
1. C
Table 7.
C
Symbol
V
Symbol
Symbol
C
OSS eq
V
R
g
t
t
(BR)DSS
increases from 0 to 80% V
d(on)
d(off)
C
I
I
C
C
Q
GS(th)
Q
= 25 °C unless otherwise specified)
DS(on
fs
GSS
R
DSS
Q
oss eq
t
t
oss
r
f
iss
rss
gs
gd
G
(1)
g
(1)
. is defined as a constant equivalent capacitance giving the same charging time as C
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
Doc ID 14894 Rev 2
V
R
(see
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
DS
GS
DD
GS
DD
DS
DS
GS
DS
GS
G
= 1 mA, V
= 4.7 Ω, V
= Max rating
= Max rating, T
= 15 V, I
= 25 V, f = 1 MHz, V
= 0, V
= 10 V
= 310 V, I
= ± 20 V
= V
= 10 V, I
= 496 V, I
Figure
Figure
Test conditions
Test conditions
Test conditions
GS
DS
, I
16)
17)
GS
D
D
D
= 0 to 496 V
GS
D
D
= 50 µA
= 1.4 A
= 1.4 A
= 0
=1.7 A,
= 2.7 A,
= 10 V
C
=125 °C
GS
= 0
Min.
Min.
Min.
620
Electrical characteristics
-
3
-
-
-
-
-
Typ.
15.6
Typ.
Typ.
32.3
3.75
385
6.8
2.1
2.5
7.5
2.2
22
55
10
13
9
6
oss
when V
Max.
Max.
± 10
Max
4.5
2.5
50
1
-
-
-
-
-
-
D
S
Unit
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
Ω
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