IRFZ44ZPBF International Rectifier, IRFZ44ZPBF Datasheet

IRFZ44ZPBF

Manufacturer Part Number

IRFZ44ZPBF

Description

MOSFET N-CH 55V 51A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFZ44ZPBF.pdf (12 pages)

2.IRFZ44ZPBF.pdf (3 pages)

Specifications of IRFZ44ZPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

13.9 mOhm @ 31A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

51A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

43nC @ 10V

Input Capacitance (ciss) @ Vds

1420pF @ 25V

Power - Max

80W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current, Drain

51 A

Gate Charge, Total

29 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

80 W

Resistance, Drain To Source On

11.1 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

33 ns

Time, Turn-on Delay

14 ns

Transconductance, Forward

22 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1.2 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N Channel

Continuous Drain Current Id

51A

Drain Source Voltage Vds

55V

On Resistance Rds(on)

13.9mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

51 A

Mounting Style

Through Hole

Gate Charge Qg

29 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFZ44ZPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ44ZPBF

Manufacturer:

INTERNATIONAL RECTIFIER

Quantity:

30 000

Current page: 1 of 12
Download datasheet (383Kb)

Features

Description

This HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of

applications.

HEXFET

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Parameter

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

IRFZ44ZPbF

TO-220AB

HEXFET

300 (1.6mm from case )

See Fig.12a,12b,15,16

Typ.

0.50

–––

IRFZ44ZSPbF

10 lbf•in (1.1N•m)

-55 to + 175

IRFZ44ZSPbF

IRFZ44ZLPbF

Max.

0.53

200

± 20

105

IRFZ44ZPbF

Pak

DS(on)

Power MOSFET

Max.

1.87

–––

DSS

= 51A

IRFZ44ZLPbF

= 13.9m

PD - 95379A

= 55V

TO-262

Units

W/°C

°C/W

°C

Related parts for IRFZ44ZPBF

IRFZ44ZPBF Summary of contents

Page 1

... JA R Junction-to-Ambient (PCB Mount, steady state) JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com G TO-220AB IRFZ44ZPbF Parameter @ 10V (Silicon Limited 10V (See Fig Parameter 95379A IRFZ44ZPbF IRFZ44ZSPbF IRFZ44ZLPbF ® HEXFET Power MOSFET 55V DSS R = 13.9m DS(on 51A Pak TO-262 IRFZ44ZSPbF IRFZ44ZLPbF Max ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ––– DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 0.1 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 31A ...

Page 8

SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line position indicates "Lead - Free" Notes: 1. For an ...

Page 10

T HIS IS AN IRF530S WITH LOT CODE 8024 AS SEMBLED ON WW 02, 2000 ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" OR Notes: 1. For an Automotive Qualified ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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