IRFB4212PBF International Rectifier, IRFB4212PBF Datasheet

MOSFET N-CH 100V 18A TO-220AB

IRFB4212PBF

Manufacturer Part Number
IRFB4212PBF
Description
MOSFET N-CH 100V 18A TO-220AB
Manufacturer
International Rectifier
Datasheets

Specifications of IRFB4212PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
72.5 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 50V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
18 A
Gate Charge, Total
15 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
60 W
Resistance, Drain To Source On
58 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
14 ns
Time, Turn-on Delay
7.7 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
18 A
Mounting Style
Through Hole
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB4212PBF
Manufacturer:
OKI
Quantity:
1 194
Part Number:
IRFB4212PBF
Manufacturer:
IR
Quantity:
35 000
Part Number:
IRFB4212PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFB4212PBF
Quantity:
9 000
Features
• Key parameters optimized for Class-D audio
• Low R
• Low Q
• Low Q
• 175°C operating junction temperature for
• Can deliver up to 150W per channel into 4Ω load in
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Notes  through … are on page 2
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
amplifier applications
ruggedness
half-bridge topology
J
STG
efficiency
DS
GS
D
D
θJC
θCS
θJA
@ T
@ T
@T
@T
C
C
C
C
DSON
= 25°C
= 100°C
G
RR
= 25°C
= 100°C
and Q
for better THD and lower EMI
for improved efficiency
SW
for better THD and improved
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Parameter
Parameter
GS
GS
@ 10V
@ 10V
V
R
Q
Q
R
T
J
DS
DS(ON)
G(int)
g
sw
G
max
typ.
typ.
typ.
typ. @ 10V
Key Parameters
Typ.
0.50
–––
–––
D
S
10lbxin (1.1Nxm)
IRFB4212PbF
-55 to + 175
Max.
100
300
±20
0.4
18
13
57
60
30
Max.
–––
72.5
2.5
62
100
175
8.3
2.2
15
TO-220AB
Units
Units
W/°C
°C/W
°C
W
V
A
m:
nC
nC
°C
V
1
9/16/05

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IRFB4212PBF Summary of contents

Page 1

... Junction-to-Ambient f R θJA Notes  through … are on page 2 www.irf.com typ. @ 10V DS(ON) Q typ typ typ. G(int) T max J G Parameter @ 10V GS @ 10V GS Parameter IRFB4212PbF Key Parameters 100 8.3 nC Ω 2.2 175 ° TO-220AB Max. Units 100 V ± 0.4 W/°C - 175 ° ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V BOTTOM 6.0V 10 6.0V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100.0 10 ...

Page 4

175°C 1 25°C 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 125 T ...

Page 5

125°C 0 25°C 0 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 10 Duty Cycle = Single Pulse 0.01 0.05 0.10 1 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 16 D.U 20V V GS 0.01 Ω Fig 17a. Unclamped Inductive Test Circuit ...

Page 7

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages are not ...

Page 8

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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