MOSFET N-CH 100V 18A TO-220AB

IRFB4212PBF

Manufacturer Part NumberIRFB4212PBF
DescriptionMOSFET N-CH 100V 18A TO-220AB
ManufacturerInternational Rectifier
IRFB4212PBF datasheets
 


Specifications of IRFB4212PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs72.5 mOhm @ 13A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C18AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs23nC @ 10VInput Capacitance (ciss) @ Vds550pF @ 50V
Power - Max60WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Current, Drain18 A
Gate Charge, Total15 nCPackage TypeTO-220AB
PolarizationN-ChannelPower Dissipation60 W
Resistance, Drain To Source On58 MilliohmsTemperature, Operating, Maximum+175 °C
Temperature, Operating, Minimum-55 °CTime, Turn-off Delay14 ns
Time, Turn-on Delay7.7 nsTransconductance, Forward11 S
Voltage, Breakdown, Drain To Source100 VVoltage, Forward, Diode1.3 V
Voltage, Gate To Source±20 VTransistor PolarityN-Channel
Drain-source Breakdown Voltage100 VGate-source Breakdown Voltage20 V
Continuous Drain Current18 AMounting StyleThrough Hole
Gate Charge Qg15 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
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Features
• Key parameters optimized for Class-D audio
amplifier applications
• Low R
for improved efficiency
DSON
• Low Q
and Q
for better THD and improved
G
SW
efficiency
• Low Q
for better THD and lower EMI
RR
• 175°C operating junction temperature for
ruggedness
• Can deliver up to 150W per channel into 4Ω load in
half-bridge topology
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
Pulsed Drain Current c
I
DM
Power Dissipation f
P
@T
= 25°C
D
C
Power Dissipation f
P
@T
= 100°C
D
C
Linear Derating Factor
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Junction-to-Case f
R
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
Junction-to-Ambient f
R
θJA
Notes  through … are on page 2
www.irf.com
V
DS
R
typ. @ 10V
DS(ON)
Q
typ.
g
Q
typ.
sw
R
typ.
G(int)
T
max
J
G
Parameter
@ 10V
GS
@ 10V
GS
Parameter
IRFB4212PbF
Key Parameters
100
V
m:
72.5
15
nC
8.3
nC
2.2
175
°C
D
S
TO-220AB
Max.
Units
100
V
±20
18
A
13
57
60
W
30
0.4
W/°C
-55 to + 175
°C
300
10lbxin (1.1Nxm)
Typ.
Max.
Units
–––
2.5
0.50
–––
°C/W
–––
62
1
9/16/05

IRFB4212PBF Summary of contents

  • Page 1

    ... Junction-to-Ambient f R θJA Notes  through … are on page 2 www.irf.com typ. @ 10V DS(ON) Q typ typ typ. G(int) T max J G Parameter @ 10V GS @ 10V GS Parameter IRFB4212PbF Key Parameters 100 8.3 nC Ω 2.2 175 ° TO-220AB Max. Units 100 V ± 0.4 W/°C - 175 ° ...

  • Page 2

    Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

  • Page 3

    VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V BOTTOM 6.0V 10 6.0V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100.0 10 ...

  • Page 4

    175°C 1 25°C 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 125 T ...

  • Page 5

    125°C 0 25°C 0 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 10 Duty Cycle = Single Pulse 0.01 0.05 0.10 1 ...

  • Page 6

    D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 16 D.U 20V V GS 0.01 Ω Fig 17a. Unclamped Inductive Test Circuit ...

  • Page 7

    EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages are not ...

  • Page 8

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...