IRFB4212PBF International Rectifier, IRFB4212PBF Datasheet - Page 2

MOSFET N-CH 100V 18A TO-220AB

IRFB4212PBF

Manufacturer Part Number
IRFB4212PBF
Description
MOSFET N-CH 100V 18A TO-220AB
Manufacturer
International Rectifier
Datasheets

Specifications of IRFB4212PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
72.5 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 50V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
18 A
Gate Charge, Total
15 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
60 W
Resistance, Drain To Source On
58 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
14 ns
Time, Turn-on Delay
7.7 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
18 A
Mounting Style
Through Hole
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
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Price
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ƒ
Notes:
BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
R
t
t
t
t
C
C
C
C
L
L
E
I
E
I
I
V
t
Q
Electrical Characteristics @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
fs
D
S
DS(on)
GS(th)
G(int)
iss
oss
rss
oss
AS
AR
SD
g
Q
Q
Q
Q
sw
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
@ T
Starting T
GS(th)
DSS
gs1
gs2
gd
godr
DSS
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
J
= 25°C, L = 0.32mH, R
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
G
= 25Ω, I
gs2
Ãg
+ Q
J
= 25°C (unless otherwise specified)
AS
gd
)
= 13A.
g
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
11
avalanche information
R
Typ. Max. Units
Typ. Max. Units
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
0.09
–––
–––
–––
–––
–––
–––
–––
550
350
–––
–––
–––
-13
3.3
1.4
6.9
3.4
8.3
2.2
7.7
3.9
4.5
7.5
58
15
28
14
66
35
41
69
θ
is measured at
72.5
-200
Typ.
See Fig. 14, 15, 17a, 17b
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
5.0
1.3
20
23
18
57
62
mV/°C
V/°C
mΩ
µA
nA
nC
nH
nC
pF
ns
ns
V
V
S
A
V
J
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 19
V
I
R
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
G
= 13A
= 13A
= 25°C, I
= 25°C, I
= 2.5Ω
= V
= 100V, V
= 100V, V
= 50V, I
= 80V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V, V
= 0V
= 0V, V
GS
Max.
25
, I
D
Conditions
Conditions
S
F
D
DS
D
D
= 250µA
GS
= 13A, V
= 13A
= 250µA
= 13A
= 13A
GS
GS
= 0V to 80V
= 10V
e
= 0V
= 0V, T
See Fig.5
D
e
Ãe
GS
www.irf.com
= 1mA
J
= 0V
= 125°C
Units
G
mJ
mJ
A
e
D
S

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