IRFB4212PBF International Rectifier, IRFB4212PBF Datasheet - Page 3

• Manufacturer Part Number: IRFB4212PBF
• Description: MOSFET N-CH 100V 18A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRFB4212PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72.5 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 50V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 18 A
• Gate Charge, Total: 15 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 60 W
• Resistance, Drain To Source On: 58 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 14 ns
• Time, Turn-on Delay: 7.7 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Mounting Style: Through Hole
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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100.0
10000
10.0
100
Fig 3. Typical Transfer Characteristics
1000
1.0
0.1
10
100
1
10
Fig 1. Typical Output Characteristics
0.1
2
1
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J = 175°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
1
Ciss
Coss
Crss
V DS = 50V
≤ 60µs PULSE WIDTH
6.0V
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
6
f = 1 MHZ
10
10
8
100
10
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
Fig 2. Typical Output Characteristics
100
20
16
12
10
-60 -40 -20 0
8
4
0
1
0.1
I D = 13A
V GS = 10V
0
I D = 13A
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
5
Q G Total Gate Charge (nC)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
20 40 60 80 100 120 140 160 180
1
V DS = 80V
VDS= 50V
VDS= 20V
10
≤ 60µs PULSE WIDTH
Tj = 175°C
15
6.0V
10
20
3
100
25