IRFB4212PBF International Rectifier, IRFB4212PBF Datasheet - Page 4

MOSFET N-CH 100V 18A TO-220AB

IRFB4212PBF

Manufacturer Part Number
IRFB4212PBF
Description
MOSFET N-CH 100V 18A TO-220AB
Manufacturer
International Rectifier
Datasheets

Specifications of IRFB4212PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
72.5 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 50V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
18 A
Gate Charge, Total
15 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
60 W
Resistance, Drain To Source On
58 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
14 ns
Time, Turn-on Delay
7.7 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
18 A
Mounting Style
Through Hole
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
4
100.0
10.0
20
16
12
1.0
0.1
8
4
0
25
0.0
0.001
0.01
0.1
10
1
T J = 175°C
1E-006
50
V SD , Source-to-Drain Voltage (V)
T J , Junction Temperature (°C)
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
0.5
0.20
0.05
0.02
0.10
0.01
SINGLE PULSE
( THERMAL RESPONSE )
100
T J = 25°C
1E-005
125
1.0
V GS = 0V
150
1.5
175
t 1 , Rectangular Pulse Duration (sec)
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
1
R
1
τ
2
τ
R
0.001
2
2
R
2
Fig 10. Threshold Voltage vs. Temperature
1000
5.0
4.0
3.0
2.0
100
0.1
10
R
τ
1
-75 -50 -25
3
3
R
τ
3
3
1
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 175°C
Single Pulse
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
R
4
τ
4
R
4
V DS , Drain-toSource Voltage (V)
4
τ
C
τ
T J , Temperature ( °C )
Ri (°C/W)
0.01
0
0.0489
0.3856
1.3513
0.7140
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
100µsec
25
10msec
DC
1msec
50
0.00000
0.000062
0.001117
0.013125
τi (sec)
75
100
www.irf.com
I D = 250µA
100 125 150 175
0.1
1000

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