IRFB4212PBF International Rectifier, IRFB4212PBF Datasheet - Page 5

• Manufacturer Part Number: IRFB4212PBF
• Description: MOSFET N-CH 100V 18A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRFB4212PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72.5 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 50V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 18 A
• Gate Charge, Total: 15 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 60 W
• Resistance, Drain To Source On: 58 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 14 ns
• Time, Turn-on Delay: 7.7 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Mounting Style: Through Hole
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 15. Maximum Avalanche Energy Vs. Temperature
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Fig 12. On-Resistance Vs. Gate Voltage
0.5
0.4
0.3
0.2
0.1
0.0
30
25
20
15
10
5
0
6
25
0.1
10
1
1.0E-06
Starting T J , Junction Temperature (°C)
V GS , Gate-to-Source Voltage (V)
50
Duty Cycle = Single Pulse
8
T J = 25°C
T J = 125°C
TOP
BOTTOM 1% Duty Cycle
I D = 13A
75
10
0.01
0.05
0.10
100
1.0E-05
12
Single Pulse
Fig 14. Typical Avalanche Current Vs.Pulsewidth
125
I D = 13A
14
150
16
175
1.0E-04
tav (sec)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 17a, 17b.
t
D = Duty cycle in avalanche = t
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
Z
av
av =
thJC
jmax
D (ave)
= Allowable avalanche current.
=
1.0E-03
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 14, 15).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
120
100
Allowed avalanche Current vs
avalanche
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
80
60
40
20
0
25
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
Starting T J , Junction Temperature (°C)
50
pulsewidth,
1.0E-02
= P
D (ave)
jmax
75
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
100
tav
thJC
TOP
BOTTOM
125
1.0E-01
jmax
3.2A
5.7A
13A
150
is
I D
5
175