STP5NK80Z STMicroelectronics, STP5NK80Z Datasheet - Page 13

• Manufacturer Part Number: STP5NK80Z
• Description: MOSFET N-CH 800V 4.3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 2.15A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 45.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.4 Ohms
• Forward Transconductance Gfs (max / Min): 4.25 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7527-5; STP5NK80Z

STP5NK80Z - STP5NK80ZFP
DIM.
L20
L30
H1
øP
b1
e1
L1
J1
A
D
E
Q
b
c
e
F
L
15.25
MIN.
4.40
0.61
1.15
0.49
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
TO-220 MECHANICAL DATA
16.40
28.90
mm.
TYP
MAX.
15.75
10.40
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.045
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
MIN.
0.60
Package mechanical data
0.645
1.137
TYP.
inch
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
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