STP5NK80Z STMicroelectronics, STP5NK80Z Datasheet - Page 14

• Manufacturer Part Number: STP5NK80Z
• Description: MOSFET N-CH 800V 4.3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 2.15A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 45.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.4 Ohms
• Forward Transconductance Gfs (max / Min): 4.25 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7527-5; STP5NK80Z

Revision history
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Revision history
Table 8.
09-Sep-2004
06-Sep-2005
16-Aug-2006
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Revision history
Revision
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Preliminary version
Final version
New template, no content change
Changes
STP5NK80Z - STP5NK80ZFP