IRFP9140NPBF International Rectifier, IRFP9140NPBF Datasheet - Page 3

MOSFET P-CH 100V 23A TO-247AC

IRFP9140NPBF

Manufacturer Part Number
IRFP9140NPBF
Description
MOSFET P-CH 100V 23A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFP9140NPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
117 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
97nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
P
Current, Drain
-23 A
Gate Charge, Total
97 nC
Package Type
TO-247AC
Polarization
P-Channel
Power Dissipation
140 W
Resistance, Drain To Source On
0.117 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
51 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
5.3 S
Voltage, Breakdown, Drain To Source
-100 V
Voltage, Drain To Source
–100 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 21 A
Mounting Style
Through Hole
Gate Charge Qg
64.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP9140NPBF

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Part Number
Manufacturer
Quantity
Price
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100
0.1
100
10
10
1
1
4
0.1
TOP
BOTTOM - 4.5V
-V
-V
5
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
GS
VGS
DS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
6
1
T = 25°C
J
-4.5V
7
T = 175°C
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
c
= -25V
10
8
9
100
10
A
A
100
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
TOP
BOTTOM - 4.5V
I
D
= -19A
-V
T , Junction Temperature (°C)
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
J
VGS
DS
0
, Drain-to-Source Voltage (V)
1
20
40
60
20µs PULSE WIDTH
T = 175°C
80 100 120 140 160 180
-4.5V
C
10
V
GS
= -10V
100
A
A

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