STD95N3LLH6 STMicroelectronics, STD95N3LLH6 Datasheet

MOSFET N-CH 30V 80A DPAK

STD95N3LLH6

Manufacturer Part Number
STD95N3LLH6
Description
MOSFET N-CH 30V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD95N3LLH6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
24.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0042 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8891-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD95N3LLH6
Manufacturer:
ST
0
Part Number:
STD95N3LLH6-H
Manufacturer:
ST
0
Features
Application
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest R
packages.
Table 1.
November 2009
STD95N3LLH6
STU95N3LLH6
STB95N3LLH6
STP95N3LLH6
R
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
Switching applications
DS(on)
Type
STD95N3LLH6
STU95N3LLH6
N-channel 30 V, 0.0037 Ω , 80 A, D
STB95N3LLH6
STP95N3LLH6
Order codes
* Q
Device summary
g
industry benchmark
V
30 V
30 V
30 V
30 V
DSS
R
DS(on)
0.0042 Ω
0.0042 Ω
0.0042 Ω
0.0047 Ω
DS(on)
STripFET™ VI DeepGATE™ Power MOSFET
DS(on)
max
95N3LLH6
95N3LLH6
95N3LLH6
95N3LLH6
in all
Marking
STB95N3LLH6, STD95N3LLH6
STP95N3LLH6, STU95N3LLH6
80 A
80 A
80 A
80 A
Doc ID 15228 Rev 3
I
D
Figure 1.
DPAK
D²PAK
2
Package
PAK, DPAK, IPAK, TO-220
TO-220
D²PAK
DPAK
IPAK
1
1
G(1)
3
Internal schematic diagram
3
D (TAB or 2)
S(3)
Tape and reel
Tape and reel
Packaging
TO-220
Tube
Tube
IPAK
1
www.st.com
AM01474v1
2
3
1
2
1/18
3
18

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STD95N3LLH6 Summary of contents

Page 1

... ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R packages. Table 1. Device summary Order codes STB95N3LLH6 STD95N3LLH6 STP95N3LLH6 STU95N3LLH6 November 2009 STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 STripFET™ VI DeepGATE™ Power MOSFET max I D 0.0042 Ω 0.0042 Ω 0.0047 Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STx95N3LLH6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 4. Static Symbol Drain-source breakdown V (BR)DSS Voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STx95N3LLH6 Table 6. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area I D (A) 100 10 Tj=175°C 1 Tc=25°C Sinlge pulse 0.1 0.1 1 Figure 4. Output characteristics I D (A) V =10V GS 300 250 200 150 100 50 ...

Page 7

STx95N3LLH6 Figure 8. Gate charge vs gate-source voltage Figure (V) V =15V =80A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) ...

Page 8

Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load D.U. Figure 14. Test circuit for inductive load switching and diode recovery times ...

Page 9

STx95N3LLH6 Figure 18. Gate charge waveform Vds Vgs(th) Qgs1 Qgs2 Qgd Id Vgs Doc ID 15228 Rev 3 Test circuits 9/18 ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STx95N3LLH6 DIM (L1 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0.80 o ...

Page 12

Package mechanical data DIM 12/18 TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 ...

Page 13

STx95N3LLH6 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

Page 14

Package mechanical data 14/18 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ...

Page 15

STx95N3LLH6 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 1.9 R ...

Page 16

Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 ...

Page 17

STx95N3LLH6 6 Revision history Table 8. Document revision history Date 01-Dec-2008 20-May-2009 10-Nov-2009 Revision 1 First release – Document status promoted from preliminary data to datasheet. 2 – Added new package, mechanical data: D²PAK 3 Added new device in TO-220 ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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