STB50NF25 STMicroelectronics, STB50NF25 Datasheet - Page 4

• Manufacturer Part Number: STB50NF25
• Description: MOSFET N-CH 250V 45A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB50NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 69 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 2670pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.069 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7949-2; STB50NF25

Electrical characteristics
2
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
C
DS(on)
C
Q
Q
GS(th)
GSS
fs
R
DSS
Q
oss
rss
iss
gd
gs
G
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
V
V
V
V
(see Figure 14)
f=1 MHz Gate Bias, Bias=0
Test signal level=20 mV
open drain
I
V
V
V
V
V
D
DS
DS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
=0
=200 V, I
= V
= 10 V, I
=10 V, I
=25 V, f=1 MHz,
=10 V
= Max rating,
= Max rating @125 °C
= ±20 V
Test conditions
Test conditions
GS
, I
D
D
D
GS
D
= 22 A
= 22 A
= 250 µA
= 45 A
= 0
Min.
Min.
STB50NF25 - STP50NF25
250
2
0.055
Typ.
2670
Typ.
70.5
68.2
12.2
33.4
465
1.1
20
3
0.069
Max.
±
Max.
100
10
1
4
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
S
Ω