STB50NF25 STMicroelectronics, STB50NF25 Datasheet - Page 7

• Manufacturer Part Number: STB50NF25
• Description: MOSFET N-CH 250V 45A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB50NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 69 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 2670pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.069 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7949-2; STB50NF25

STB50NF25 - STP50NF25
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
Figure 11. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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