IRF1010EZSPBF International Rectifier, IRF1010EZSPBF Datasheet

MOSFET N-CH 60V 75A D2PAK

IRF1010EZSPBF

Manufacturer Part Number
IRF1010EZSPBF
Description
MOSFET N-CH 60V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF1010EZSTRLP.pdf (12 pages)

Specifications of IRF1010EZSPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 51A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
2810pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1010EZSPBF
Features
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
HEXFET
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
CS
JA
JA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Parameter
Parameter
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
IRF1010EZPbF
G
i
j
TO-220AB
d
HEXFET
300 (1.6mm from case )
See Fig.12a,12b,15,16
IRF1010EZSPbF
Typ.
IRF1010EZLPbF
0.50
–––
–––
–––
IRF1010EZSPbF
10 lbf•in (1.1N•m)
S
D
IRF1010EZPbF
-55 to + 175
D
Max.
0.90
2
340
140
± 20
180
84
60
75
99
Pak
®
R
Power MOSFET
DS(on)
V
Max.
1.11
–––
62
40
DSS
I
D
IRF1010EZLPbF
= 75A
PD - 95483C
= 8.5m
= 60V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF1010EZSPBF Summary of contents

Page 1

... Limited Parameter 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF ® Power MOSFET 60V DSS R = 8.5m DS(on 75A Pak TO-262 IRF1010EZSPbF IRF1010EZLPbF Max. Units 340 140 W 0.90 W/°C ± 180 See Fig.12a,12b,15, - 175 °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. Max. Units – ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ––– DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 1000 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 1 4.5V 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 51A ...

Page 8

SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...

Page 9

EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" Notes: 1. For an Automotive Qualified version of ...

Page 10

THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf 2. For the most current ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBLE 19, 1997 IN THE MBLY LINE "C" OR Notes: 1. ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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