IRF3710ZPBF International Rectifier, IRF3710ZPBF Datasheet

MOSFET N-CH 100V 59A TO-220AB

IRF3710ZPBF

Manufacturer Part Number
IRF3710ZPBF
Description
MOSFET N-CH 100V 59A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF3710ZPBF.pdf (12 pages)
2.IRF3710ZPBF.pdf (3 pages)

Specifications of IRF3710ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
59 A
Gate Charge, Total
82 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
160 W
Resistance, Drain To Source On
14 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
41 ns
Time, Turn-on Delay
17 ns
Transconductance, Forward
35 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
59 A
Mounting Style
Through Hole
Gate Charge Qg
82 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF3710ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF3710ZPBF
Manufacturer:
TOSHIBA
Quantity:
5 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF3710ZPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF3710ZPBF
Quantity:
8 500
Features
Description
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
HEXFET
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
This HEXFET
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
CS
JA
JA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(tested)
C
C
C
= 25°C
= 100°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Parameter
Parameter
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
IRF3710ZPbF
G
TO-220AB
i
j
d
300 (1.6mm from case )
See Fig.12a,12b,15,16
HEXFET
Typ.
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
IRF3710ZSPbF
S
D
-55 to + 175
IRF3710ZSPbF
IRF3710ZLPbF
Max.
IRF3710ZPbF
D
240
160
± 20
170
200
1.1
59
42
2
Pak
®
R
Power MOSFET
Max.
V
DS(on)
0.92
–––
62
40
DSS
I
D
IRF3710ZLPbF
= 59A
PD - 95466A
= 100V
= 18m
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF3710ZPBF Summary of contents

Page 1

... Junction-to-Ambient (PCB Mount, steady state) JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com G TO-220AB IRF3710ZPbF Parameter @ 10V (Silicon Limited 10V (See Fig 300 (1.6mm from case ) Parameter 95466A IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF ® HEXFET Power MOSFET 100V DSS R = 18m DS(on 59A Pak TO-262 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 100 7.0V 6.0V 5.5V 5.0V 10 BOTTOM 4.5V 1 4.5V 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 10 ...

Page 4

0V MHZ iss rss = 10000 oss ds gd Ciss 1000 Coss 100 ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current vs.Pulsewidth 200 TOP Single Pulse BOTTOM 10% Duty Cycle 35A 150 100 ...

Page 8

SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 MBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB package ...

Page 10

T HIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf3710z.pdf 2. For the most ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 EMBLY LINE "C" Note: "P" in assembly ...

Page 12

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. ...

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