STP95N4F3 STMicroelectronics, STP95N4F3 Datasheet - Page 4

• Manufacturer Part Number: STP95N4F3
• Description: MOSFET N-CH 40V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP95N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7536-5; STP95N4F3

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
C
I
C
Q
Q
GS(th)
DS(on)
fs
DSS
GSS
Q
oss
rss
iss
gd
gs
g
(1)
=25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Static
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 13288 Rev 3
I
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
GS
V
V
V
V
Figure 14
= 250 µA, V
DS
DS
DD
GS
= V
= 10 V, I
= 10 V, I
= Max rating,
= Max rating,Tc = 125 °C
= ±20 V
=20 V, I
= 25 V, I
=25 V, f=1 MHz, V
=10 V
GS
Test conditions
Test conditions
, I
D
D
D
D
= 40 A for DPAK
= 40 A for TO-220
= 250 µA
GS
= 80 A
D
=40 A
= 0
GS
=0
STD95N4F3, STP95N4F3
Min. Typ. Max. Unit
Min
40
2
-
-
-
2200
Typ. Max. Unit
100
580
5.0
5.4
40
40
11
8
±
100
5.8
6.2
200
10
54
4
mΩ
mΩ
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
S