STP95N4F3 STMicroelectronics, STP95N4F3 Datasheet - Page 7

• Manufacturer Part Number: STP95N4F3
• Description: MOSFET N-CH 40V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP95N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7536-5; STP95N4F3

STD95N4F3, STP95N4F3
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
Doc ID 13288 Rev 3
Figure 11. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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