IRFB23N15DPBF International Rectifier, IRFB23N15DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB23N15DPBF
• Description: MOSFET N-CH 150V 23A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB23N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 23 A
• Gate Charge, Total: 37 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 136 W
• Resistance, Drain To Source On: 0.09 Ohm
• Resistance, Thermal, Junction To Case: 1.1 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 23 A
• Mounting Style: Through Hole
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB23N15DPBF

Diode Characteristics
IRFB/IRFS/IRFSL23N15DPbF
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
E
I
E
R
R
R
R
V
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
fs
2
AS
AR
(BR)DSS
DS(on)
GS(th)
θJC
θCS
θJA
θJA
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
11
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1200 –––
1520 –––
0.18
–––
––– 0.090
–––
–––
–––
–––
––– -100
–––
260
120
210
–––
–––
–––
150
9.6
8.4
0.8
37
19
10
32
18
65
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
220
5.5
1.3
1.2
92
25
56
14
29
23
–––
µA
nA
nC
ns
pF
µC
ns
V
Ω
V
S
V
Typ.
Typ.
0.50
V/°C
–––
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz†
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
J
J
= 14A
Reference to 25°C, I
= 14A
= 25°C, I
= 25°C, I
= 5.1Ω
= V
= 150V, V
= 120V, V
= 25V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, „
= 75V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 14A, V
= 14A
= 250µA
= 14A
= 14A
GS
GS
= 0V to 120V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
13.6
260
–––
1.1
14
62
40
= 0V, T
= 0V
www.irf.com
GS
„
D
J
= 1mA
= 0V „
G
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)