IRFB23N15DPBF International Rectifier, IRFB23N15DPBF Datasheet - Page 3

• Manufacturer Part Number: IRFB23N15DPBF
• Description: MOSFET N-CH 150V 23A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB23N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 23 A
• Gate Charge, Total: 37 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 136 W
• Resistance, Drain To Source On: 0.09 Ohm
• Resistance, Thermal, Junction To Case: 1.1 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 23 A
• Mounting Style: Through Hole
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB23N15DPBF

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100
0.1
0.01
10
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
1
10
1
4
0.1
TOP
BOTTOM
T = 175 C
J
5
V
V
GS
DS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
°
6
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25 C
J
7
1
°
8
V
20µs PULSE WIDTH
DS
5.0V
20µs PULSE WIDTH
T = 25 C
9
J
= 50V
10
10
°
11
12
IRFB/IRFS/IRFSL23N15DPbF
100
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
0.1
I =
D
TOP
BOTTOM
23A
V
T , Junction Temperature ( C)
DS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
5.0V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100