IRFB23N15DPBF International Rectifier, IRFB23N15DPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB23N15DPBF
• Description: MOSFET N-CH 150V 23A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB23N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 23 A
• Gate Charge, Total: 37 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 136 W
• Resistance, Drain To Source On: 0.09 Ohm
• Resistance, Thermal, Junction To Case: 1.1 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 23 A
• Mounting Style: Through Hole
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB23N15DPBF

IRFB/IRFS/IRFSL23N15DPbF
4
10000
1000
100
100
10
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 175 C
J
V
0.4
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
°
,Source-to-Drain Voltage (V)
0.6
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Coss
Crss
Ciss
0.8
T = 25 C
J
f = 1 MHZ
1.0
100
°
V
GS
1.2
SHORTED
= 0 V
1.4
1000
1000
20
16
12
100
8
4
0
Fig 8. Maximum Safe Operating Area
10
0
1
I =
D
1
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
C
J
14A
= 25 C
= 175 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
10
V
Q , Total Gate Charge (nC)
DS
°
G
°
, Drain-to-Source Voltage (V)
20
10
BY R
30
V
V
V
DS(on)
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 120V
= 75V
= 30V
40
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100
10us
100us
1ms
10ms
50
13
1000
60