IRL3705ZPBF International Rectifier, IRL3705ZPBF Datasheet

MOSFET N-CH 55V 75A TO-220AB

IRL3705ZPBF

Manufacturer Part Number
IRL3705ZPBF
Description
MOSFET N-CH 55V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRL3705ZPBF.pdf (12 pages)

Specifications of IRL3705ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 52A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
2880pF @ 25V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.008Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±16V
Continuous Drain Current
86A
Power Dissipation
130W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Mounting Style
Through Hole
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL3705ZPBF

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Part Number
Manufacturer
Quantity
Price
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Features
l
l
l
l
l
l
l
Description
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
CS
JA
JA
@ T
@ T
@ T
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Power MOSFET utilizes the latest
Ã
Parameter
Parameter
i
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
(Package Limited)
IRL3705ZPbF
h
TO-220AB
G
See Fig.12a, 12b, 15, 16
Typ.
HEXFET
300 (1.6mm from case )
0.50
–––
–––
–––
IRL3705ZSPbF
10 lbf
D
S
-55 to + 175
IRL3705ZSPbF
D
IRL3705ZLPbF
2
y
Max.
Pak
IRL3705ZPbF
in (1.1N
0.88
340
130
± 16
120
180
86
61
75
®
R
Power MOSFET
DS(on)
y
V
m)
Max.
1.14
–––
DSS
I
62
40
D
IRL3705ZLPbF
= 75A
PD - 95579A
= 8.0m
TO-262
= 55V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRL3705ZPBF Summary of contents

Page 1

... Case-to-Sink, Flat Greased Surface CS R Junction-to-Ambient JA R Junction-to-Ambient (PCB Mount) JA www.irf.com G TO-220AB IRL3705ZPbF Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF ® HEXFET Power MOSFET 55V DSS R = 8.0m DS(on 75A Pak TO-262 IRL3705ZSPbF IRL3705ZLPbF Max. Units 340 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 25° 15V 60µs ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 0.1 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 150 TOP Single Pulse BOTTOM 1% Duty Cycle 125 52A 100 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN THE AS S EMBLY LINE "C" Note: "P" sembly line position indicates "Lead - Free" Notes: 1. For an Automotive Qualified ...

Page 10

T HIS IS AN IRF530S WITH LOT CODE 8024 AS SEMBLED ON WW 02, 2000 ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASS EMBLY LINE "C" OR Notes: 1. For an ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

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