IXTP48N20T IXYS, IXTP48N20T Datasheet

MOSFET N-CH 200V 48A TO-220

IXTP48N20T

Manufacturer Part Number
IXTP48N20T
Description
MOSFET N-CH 200V 48A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTP48N20T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
48 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
48
Rds(on), Max, Tj=25°c, (?)
0.05
Ciss, Typ, (pf)
3090
Qg, Typ, (nc)
60
Trr, Typ, (ns)
130
Trr, Max, (ns)
-
Pd, (w)
250
Rthjc, Max, (k/w)
0.5
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Trench
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Transient
T
T
T
T
I
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-3P)
TO-263
TO-3P
Test Conditions
V
V
V
V
V
TO-220
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
≤ V
= 250μA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 175°C
, Note 1
= 1MΩ
T
J
= 150°C
JM
IXTQ48N20T
IXTA48N20T
IXTP48N20T
10..65/2.2..14.6
200
2.5
Min.
-55 ... +175
-55 ... +175
Characteristic Values
Maximum Ratings
1.13/10
± 30
200
200
130
500
250
175
300
260
Typ.
3.0
2.5
5.5
48
40
5
3
± 100 nA
Max.
Nm/lb.in
Nm/lb.in
250 μA
4.5
50 mΩ
5 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
V
g
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G = Gate
S = Source
Features
Advantages
Applications
D25
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DSS
DS(on)
G
D
DS(on)
G
S
D S
≤ ≤ ≤ ≤ ≤
= 48A
= 200V
D
Tab = Drain
G
S
50mΩ Ω Ω Ω Ω
= Drain
D (Tab)
D (Tab)
D (Tab)
DS99948A(02/10)

Related parts for IXTP48N20T

IXTP48N20T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved IXTA48N20T IXTP48N20T IXTQ48N20T Maximum Ratings 200 = 1MΩ 200 GS ± 130 JM 5 500 ≤ 175° 250 -55 ... +175 175 -55 ... +175 300 260 10..65/2.2..14.6 1.13/10 2.5 3.0 5 ...

Page 2

... L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA48N20T IXTP48N20T TO-220 (IXTP) Outline Max Pins Gate 3 - Source nC nC 0.50 °C/W °C/W °C/W Max 192 A TO-3P (IXTQ) Outline 1 ...

Page 3

... 10V 3.5 4.0 4.5 5.0 5.5 6.0 = 24A Value vs 175º 25º 100 110 IXTA48N20T IXTP48N20T Fig. 2. Extended Output Characteristics @ T 140 V = 10V GS 8V 120 100 Volts DS Fig Normalized to I DS(on) Junction Temperature 3 10V GS 3.0 2.6 2 ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 1.00 C iss 0.10 C oss C rss 0. 0.00001 IXTA48N20T IXTP48N20T Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V =100V 24A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Seconds IXTQ48N20T 40ºC J 25º ...

Page 5

... I = 24A d(off) = 15V 25º 125º IXTA48N20T IXTP48N20T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 5Ω 15V 100V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 5Ω 15V 100V 24A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs ...

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