MOSFET N-CH 100V 97A TO-220AB

IRFB4410ZPBF

Manufacturer Part NumberIRFB4410ZPBF
DescriptionMOSFET N-CH 100V 97A TO-220AB
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFB4410ZPBF datasheet
 


Specifications of IRFB4410ZPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs9 mOhm @ 58A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C97AVgs(th) (max) @ Id4V @ 150µA
Gate Charge (qg) @ Vgs120nC @ 10VInput Capacitance (ciss) @ Vds4820pF @ 50V
Power - Max230WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN-Channel
Drain-source Breakdown Voltage100 VGate-source Breakdown Voltage20 V
Continuous Drain Current97 APower Dissipation230 W
Mounting StyleThrough HoleGate Charge Qg83 nC
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Applications
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
l
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
l
Ruggedness
Fully Characterized Capacitance and Avalanche
l
SOA
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
l
Absolute Maximum Ratings
Symbol
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Avalanche Current
I
AR
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat Greased Surface , TO-220
θCS
R
Junction-to-Ambient, TO-220
θJA
R
Junction-to-Ambient (PCB Mount) , D
θJA
www.irf.com
G
D
TO-220AB
IRFB4410ZPbF
Gate
Parameter
@ 10V (Silicon Limited)
GS
e
d
f
Parameter
j
j
ij
2
Pak
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
HEXFET Power MOSFET
V
D
DSS
R
typ.
DS(on)
max.
I
D (Silicon Limited)
S
D
D
S
S
D
D
G
G
2
D
Pak
IRFS4410ZPbF
IRFSL4410ZPbF
G
D
Drain
Max.
97
69
390
230
1.5
± 20
16
-55 to + 175
300
x
x
10lb
in (1.1N
m)
242
See Fig. 14, 15, 22a, 22b,
Typ.
Max.
–––
0.65
0.50
–––
–––
62
–––
40
100V
7.2m
9.0m
97A
S
D
G
TO-262
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
12/1/10

IRFB4410ZPBF Summary of contents

  • Page 1

    ... R Case-to-Sink, Flat Greased Surface , TO-220 θCS R Junction-to-Ambient, TO-220 θJA R Junction-to-Ambient (PCB Mount θJA www.irf.com G D TO-220AB IRFB4410ZPbF Gate Parameter @ 10V (Silicon Limited Parameter Pak IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited Pak IRFS4410ZPbF IRFSL4410ZPbF G ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

  • Page 3

    VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 4.5V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

  • Page 4

    175° 25°C 1 0.1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 100 ...

  • Page 5

    D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ ...

  • Page 6

    150µA 2 250µ 1.0mA 1 1.0A 1.0 -75 -50 - 100 125 150 175 200 Temperature ...

  • Page 7

    D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit Second Pulse ...

  • Page 8

    TO-220AB packages are not recommended for Surface Mount Application. 8 www.irf.com ...

  • Page 9

    TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å TO-262 packages are not recommended for Surface Mount Application. www.irf.com DIU@SI6UDPI6 S@8UDAD@S PBP ...

  • Page 10

    UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S A$"T 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

  • Page 11

    TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...