IRFB4410ZPBF International Rectifier, IRFB4410ZPBF Datasheet

IRFB4410ZPBF

Manufacturer Part Number

IRFB4410ZPBF

Description

MOSFET N-CH 100V 97A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFB4410ZPBF.pdf (11 pages)

Specifications of IRFB4410ZPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

9 mOhm @ 58A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

97A

Vgs(th) (max) @ Id

4V @ 150µA

Gate Charge (qg) @ Vgs

120nC @ 10V

Input Capacitance (ciss) @ Vds

4820pF @ 50V

Power - Max

230W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

97 A

Power Dissipation

230 W

Mounting Style

Through Hole

Gate Charge Qg

83 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

IRFB4410ZPBF

Manufacturer:

MITSUBISHI

Quantity:

129

Company:

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Part Number:

IRFB4410ZPBF

Manufacturer:

Quantity:

20 000

Company:

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Part Number:

IRFB4410ZPBF

Company:

H&T Electronics

Part Number:

IRFB4410ZPBF

Quantity:

4 800

Company:

H&T Electronics

Part Number:

IRFB4410ZPBF

Quantity:

18 000

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Benefits

www.irf.com

Applications

dv/dt

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

High Efficiency Synchronous Rectification in SMPS

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

SOA

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D

Parameter

@ 10V (Silicon Limited)

Pak

IRFB4410ZPbF

TO-220AB

Gate

See Fig. 14, 15, 22a, 22b,

Typ.

0.50

–––

D (Silicon Limited)

DSS

DS(on)

10lb

-55 to + 175

IRFS4410ZPbF

in (1.1N

Max.

Drain

HEXFET Power MOSFET

390

230

± 20

300

242

1.5

IRFSL4410ZPbF

typ.

Pak

max.

IRFB4410ZPbF

IRFS4410ZPbF

Max.

0.65

–––

IRFSL4410ZPbF

7.2m

9.0m

Source

100V

TO-262

97A

Units

W/°C

°C/W

V/ns

°C

12/1/10

Related parts for IRFB4410ZPBF

IRFB4410ZPBF Summary of contents

Page 1

... R Case-to-Sink, Flat Greased Surface , TO-220 θCS R Junction-to-Ambient, TO-220 θJA R Junction-to-Ambient (PCB Mount θJA www.irf.com G D TO-220AB IRFB4410ZPbF Gate Parameter @ 10V (Silicon Limited Parameter Pak IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited Pak IRFS4410ZPbF IRFSL4410ZPbF G ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 4.5V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

175° 25°C 1 0.1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 100 ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ ...

Page 6

150µA 2 250µ 1.0mA 1 1.0A 1.0 -75 -50 - 100 125 150 175 200 Temperature ...

Page 7

D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit Second Pulse ...

Page 8

TO-220AB packages are not recommended for Surface Mount Application. 8 www.irf.com ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å TO-262 packages are not recommended for Surface Mount Application. www.irf.com DIU@SI6UDPI6 S@8UDAD@S PBP ...

Page 10

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S A$"T 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

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