IRFB4410ZPBF International Rectifier, IRFB4410ZPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB4410ZPBF
• Description: MOSFET N-CH 100V 97A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4410ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 97A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4820pF @ 50V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 97 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Static @ T
V
∆V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
Notes:

‚
ƒ
„
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
Symbol
Symbol
Symbol
(BR)DSS
above this value.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
R
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
SD
G
≤ 58A, di/dt ≤ 610A/µs, V
= 25Ω, I
/∆T
J
J
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Jmax
= 25°C (unless otherwise specified)
= 58A, V
J
, starting T
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
Ù
= 25°C, L = 0.143mH
DD
≤ V
Parameter
Parameter
(BR)DSS
, T
g
J
- Q
≤ 175°C.
gd
)
g
Ã
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
…
†
‡
ˆ
100
–––
–––
–––
–––
–––
–––
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
mended footprint and soldering techniques refer to application note #AN-994.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
oss
oss
θ
oss
4820
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
0.12
0.70
–––
–––
–––
–––
–––
–––
–––
340
170
420
690
–––
–––
–––
7.2
2.5
83
19
27
56
16
52
43
57
38
46
53
82
while V
DS
-100
–––
–––
250
100
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
390
120
–––
9.0
4.0
1.3
20
97
57
69
80
DS
is rising from 0 to 80% V
is rising from 0 to 80% V
V/°C
mΩ
µA
nA
nC
nC
pF
ns
ns
V
V
Ω
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig.5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 58A
= 58A, V
= 58A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
=2.7Ω
= 0V, I
= 10V, I
= V
= 100V, V
= 80V, V
= 20V
= -20V
= 10V, I
=50V
= 10V
= 65V
= 10V
= 0V
= 50V
= 0V, V
= 0V, V
GS
, I
DSS
D
f
f
DS
S
D
DS
DS
D
D
= 250µA
GS
DSS
= 58A, V
= 150µA
.
= 58A
=0V, V
= 58A
GS
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
= 0V, T
.
= 0V
V
I
di/dt = 100A/µs
F
R
= 58A
D
f
GS
= 85V,
GS
= 5mA
J
= 10V
= 125°C
= 0V
gÃ
www.irf.com
™
, See Fig.11
f
f
G
f
D
S